The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Jun. 11, 2021
Applicant:

Lawrence Livermore National Security, Llc, Livermore, CA (US);

Inventor:

Bryan D. Moran, Pleasanton, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 64/268 (2017.01); B29C 64/277 (2017.01); B29C 64/393 (2017.01); B33Y 50/02 (2015.01); B33Y 30/00 (2015.01);
U.S. Cl.
CPC ...
B29C 64/268 (2017.08); B29C 64/277 (2017.08); B29C 64/393 (2017.08); B33Y 30/00 (2014.12); B33Y 50/02 (2014.12);
Abstract

The present disclosure relates to a method for forming a three dimensional (3D) component from a photopolymer resin. The method may involve generating a first optical beam at a first wavelength, with the first optical beam causing polymerization of a photopolymerizable resist. A second optical beam is generated at a second wavelength, different from the first wavelength, which inhibits polymerization of the photopolymerizable resist. A device is used to receive the first and second optical beams and to generate therefrom corresponding separate first and second light patterns, respectively, where the first light pattern forms a first image on the photopolymerizable resist to cause polymerization of a first portion of the photopolymerizable resist, while the second light pattern forms a second image on the photopolymerizable resist and inhibits polymerization of a second portion of the photopolymerizable resist.


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