The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2023

Filed:

Dec. 13, 2022
Applicant:

Gwangju Institute of Science and Technology, Gwangju, KR;

Inventors:

Kwang Hee Lee, Gwangju, KR;

Hee Joo Kim, Gwangju, KR;

Young Ryun Kim, Gwangju, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 85/60 (2023.01); H10K 30/88 (2023.01); H10K 50/84 (2023.01); H10K 85/30 (2023.01); C07D 471/04 (2006.01); H01G 9/20 (2006.01);
U.S. Cl.
CPC ...
H10K 85/6572 (2023.02); C07D 471/04 (2013.01); H01G 9/20 (2013.01); H10K 30/88 (2023.02); H10K 50/84 (2023.02); H10K 85/30 (2023.02);
Abstract

The present invention relates to a novel compound for improving the photostability of an optoelectronic device, and more particularly, to a novel phenanthroline-based compound, a preparation method thereof, and an optoelectronic device including the same as a passivation layer. According to the present invention, the novel phenanthroline-based compound of Formula 1 is a novel compound in which an amine group side chain is introduced into the parent nucleus of phenanthroline, and is capable of being used in a solution process due to excellent solubility in a polar solvent, and simple introduction on an n-type semiconductor organic layer (e.g., an organic photoactive layer or an electron transport layer) as a passivation layer may bring about not only an increase in stability, but also an additional increase in efficiency such as an increase in open-circuit voltage or photocurrent.


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