The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2023

Filed:

Sep. 03, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junhyoung Kim, Seoul, KR;

Kwang-Soo Kim, Hwaseong-si, KR;

Bonghyun Choi, Yongin-si, KR;

Siwan Kim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/20 (2023.01); H10B 69/00 (2023.01);
U.S. Cl.
CPC ...
H10B 69/00 (2023.02); H10B 43/20 (2023.02);
Abstract

A three-dimensional semiconductor memory device including a substrate including a cell array region and a first connection region arranged in a first direction; and a first block structure on the substrate, the first block structure including a lower stack including a plurality of lower electrodes vertically stacked on the substrate; and intermediate stacks exposing the lower stack, the intermediate stacks including a plurality of intermediate electrodes vertically stacked on the lower stack, wherein, on the cell array region, the first block structure has a first width in a second direction crossing the first direction, and wherein, on the first connection region, the first block structure has a second width, which is larger than the first width, in the second direction.


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