The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Sep. 20, 2019
Applicant:
Wuxi Smart Memories Technologies Co., Ltd., Wuxi, CN;
Inventor:
Yushi Hu, McLean, VA (US);
Assignee:
WUXI PETABYTE TECHNOLOGIES CO., LTD., Wuxi, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 53/00 (2023.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
H10B 53/00 (2023.02); G11C 11/221 (2013.01);
Abstract
Embodiments of ferroelectric memory devices and methods for forming the ferroelectric memory devices are disclosed. In an example, a ferroelectric memory cell includes a first electrode, a second electrode, and a ferroelectric layer disposed between the first electrode and the second electrode. An edge region exposed by the first electrode and the second electrode is covered by at least one of a healing layer or a block layer.
Hu, Yushi. (2023). Ferroelectric memory devices with reduced edge defects and methods for forming the same (U.S. Patent No. 11839087). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11839087
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile