The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Mar. 03, 2021
Kioxia Corporation, Tokyo, JP;
Toshifumi Kuroda, Yokkaichi Mie, JP;
Yusuke Shimada, Yokkaichi Mie, JP;
Satoshi Nagashima, Yokkaichi Mie, JP;
KIOXIA CORPORATION, Tokyo, JP;
Abstract
A semiconductor storage device includes: a first conductive layer and a second conductive layer arranged in a first direction; a plurality of first semiconductor layers facing the first conductive layer, the plurality of first semiconductor layers arranged in a second direction intersecting the first direction; a first charge storage layer disposed between the plurality of first semiconductor layers and the first conductive layer; and a first insulating layer provided between the plurality of first semiconductor layers and the first charge storage layer in the first direction. The first insulating layer includes a first region, a second region, and a third region provided between the first region and the second region in the second direction. A nitrogen concentration in the first region and the second region is lower than a nitrogen concentration in the third region.