The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Sep. 30, 2019
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Chihiro Tomita, Kumamoto, JP;
Tomohiro Hirai, Kumamoto, JP;
Shintaro Okamoto, Kanagawa, JP;
Kentaro Eda, Kumamoto, JP;
Takashi Watanabe, Kumamoto, JP;
Kazuki Yamaguchi, Kumamoto, JP;
Norikazu Kasahara, Kumamoto, JP;
Kohei Suzuki, Kumamoto, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
The capacity of a MOS capacitor is increased. A semiconductor element includes a first semiconductor region, an insulation film, a gate electrode, and a second semiconductor region. The first semiconductor region is arranged on a semiconductor substrate and has a recess on the surface. The insulation film is arranged adjacent to the surface of the first semiconductor region. The gate electrode is arranged adjacent to the insulation film and constitutes a MOS capacitor with the first semiconductor region. The second semiconductor region is arranged adjacent to the first semiconductor region on the semiconductor substrate, formed in the same conductive type as the first semiconductor region, and supplies a carrier to the first semiconductor region when the MOS capacitor is charged and discharged.