The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Jun. 13, 2022
Chongqing Boe Optoelectronics Technology Co., Ltd., Chongqing, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Jun Wang, Beijing, CN;
Zhonghao Huang, Beijing, CN;
Yongliang Zhao, Beijing, CN;
Seung Moo Rim, Beijing, CN;
CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Chongqing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
A thin film transistor includes a substrate, and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode which are on the substrate. The active layer includes a channel region between the source electrode and the drain electrode and the channel region includes an edge region along a channel length direction and a main region outside the edge region. The thin film transistor further includes an auxiliary layer, a projection of the auxiliary layer on the substrate is at least partially overlapped with a projection of the edge region of the channel region on the substrate, and the auxiliary layer is configured to enhance a turn-on voltage of the edge region of the channel region.