The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Jun. 21, 2022
K. Eklund Innovation, Uppsala, SE;
Klas-Håkan Eklund, Uppsala, SE;
Lars Vestling, Södertälje, SE;
K. EKLUND INNOVATION, Uppsala, SE;
Abstract
Disclosed is a semiconductor device, including: a substrate of a first conductivity type that is a base for the semiconductor device; a high voltage junction field effect transistor, JFET, over the substrate, wherein the JFET including a plurality of parallel conductive layers; and a first conductive layer of the second conductivity type of the parallel conductive layers stretching over the substrate. On top of the first conductive layer of the second conductivity type is arranged a plurality of layers forming the parallel conductive layers with channels formed by a plurality of doped epitaxial layers of the second conductivity type with a plurality of gate layers of the first conductivity type on both sides thereof; wherein a lowermost layer of the first conductivity type is arranged in the form of consecutive dots with different lengths and distances between them.