The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Dec. 20, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Kang Sik Choi, Seongnam-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H10B 43/27 (2023.02);
Abstract
A semiconductor device and a manufacturing method thereof includes a source contact structure, a gate stack structure including a side region adjacent to the source contact structure, and a center region extending from the side region. The semiconductor device further includes a source gate pattern disposed under the side region of the first gate stack structure. The source gate pattern has an inclined surface facing the source contact structure. The semiconductor device also includes a channel pattern penetrating the center region of the gate stack structure, the channel pattern extending toward and contacting the source contact structure.