The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2023

Filed:

Aug. 11, 2021
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Hiro Gangi, Ota Tokyo, JP;

Tomoaki Inokuchi, Yokohama Kanagawa, JP;

Yusuke Kobayashi, Nagareyama Chiba, JP;

Hiroki Nemoto, Fuchu Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/7813 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes first to third electrodes, first and second conductive members, a semiconductor member, and a first insulating member. The first conductive member is electrically connected with the second electrode or is electrically connectable with the second electrode. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first to fourth partial regions. The third partial region is between the first and second partial regions. The second semiconductor region is between the third partial region and the third semiconductor region. The fourth partial region is between the third partial region and the second semiconductor region. At least a portion of the second semiconductor region is between the second conductive member and the third electrode. The second conductive member is electrically insulated from the second and third electrodes. The first insulating member includes first to third insulating regions.


Find Patent Forward Citations

Loading…