The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2023

Filed:

Dec. 07, 2021
Applicants:

Hyundai Motor Company, Seoul, KR;

Kia Corporation, Seoul, KR;

Inventors:

Dae Hwan Chun, Suwon-si, KR;

Junghee Park, Suwon-si, KR;

Jungyeop Hong, Seoul, KR;

Youngkyun Jung, Seoul, KR;

NackYong Joo, Suwon-si, KR;

Assignees:

Hyundai Motor Company, Seoul, KR;

Kia Corporation, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/267 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02494 (2013.01); H01L 29/06 (2013.01); H01L 29/7869 (2013.01);
Abstract

An embodiment semiconductor module includes a substrate, a heterogeneous thin film including a first semiconductor layer disposed on a first region of the substrate and a second semiconductor layer disposed on a second region of the substrate, a first semiconductor device disposed on the first semiconductor layer of the heterogeneous thin film, and a second semiconductor device disposed on the second semiconductor layer of the heterogeneous thin film, wherein one of the first semiconductor layer or the second semiconductor layer comprises gallium oxide (GaO) and the other includes silicon (Si).


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