The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Sep. 24, 2021
Paragraf Limited, Somersham, GB;
Paragraf Limited, Somersham, GB;
Abstract
The present invention provides a method for the formation of graphene on a silicon substrate, the method comprising: (i) providing a silicon wafer having a growth surface which is free of native oxides, in a reaction chamber; (ii) nitriding the growth surface with a nitrogen-containing gas with the wafer at a temperature in excess of 800° C., to thereby form a silicon nitride layer; and (iii) forming a graphene mono-layer or multiple layer structure on the silicon nitride layer; wherein the method is performed in-situ and sequentially in the reaction chamber. The present invention also provides a graphene-on-silicon layer structure having an intervening silicon nitride layer and free of any intervening native oxide layer.