The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Oct. 08, 2021
Hitachi, Ltd., Tokyo, JP;
Masahiro Masunaga, Tokyo, JP;
Shinji Nomoto, Tokyo, JP;
Ryo Kuwana, Tokyo, JP;
Isao Hara, Tokyo, JP;
HITACHI, LTD., Tokyo, JP;
Abstract
A semiconductor device includes an electrostatic protection circuitand a MOSFETincluding a gate terminal. The electrostatic protection circuitincludes a positive-side power supply terminal, a negative-side power supply terminal, a first protection diode, a second protection diode, a resistance element, and a bipolar transistor. The second protection diodeincludes an anode terminal electrically connected to the negative-side power supply terminalvia the resistance element, and a cathode terminal electrically connected to the gate terminal. The bipolar transistorincludes a base terminal, an emitter terminal, and a collector terminal. The bipolar transistoris electrically connected to the anode terminal of the second protection diode, the gate terminal, and the positive-side power supply terminal. The electrostatic protection circuitis formed on a semiconductor substrate made of silicon carbide.