The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Aug. 05, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jaemyung Choi, Busan-si, KR;
Kyoungwoo Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method for manufacturing a semiconductor device including forming an insulating structure, forming a hard mask layer on the insulating structure, performing a first etching process to form a first opening at the hard mask layer, forming a first sacrificial pattern in the first opening, forming, on the hard mask layer, a first photoresist pattern including a second opening and a third opening, the second opening exposing a top surface of the first sacrificial pattern, the third opening exposing a top surface of the hard mask layer, and performing a second etching process using the first photoresist pattern as an etch mask may be provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile