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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11837472 B1

PDFFull Text
Date of Patent:
Dec. 05, 2023

Filed:

Aug. 24, 2021

Diamond semiconductor system and method

Applicant:

Akhan Semiconductor, Inc., Gurnee, IL (US);

Inventor:

Adam Khan, San Francisco, CA (US);

Assignee:

AKHAN SEMICONDUCTOR, INC., Gurnee, IL (US);

Attorneys:

David R. Stevens

Stevens Law Group

Primary Examiner:

Chuong A Luu

Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/868 (2006.01); H01L 21/02 (2006.01); H01L 33/34 (2010.01); H01L 21/3065 (2006.01); H01L 31/028 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 33/00 (2010.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0415 (2013.01); H01L 21/0237 (2013.01); H01L 21/0262 (2013.01); H01L 21/02085 (2013.01); H01L 21/02381 (2013.01); H01L 21/02444 (2013.01); H01L 21/02488 (2013.01); H01L 21/02527 (2013.01); H01L 21/02576 (2013.01); H01L 21/043 (2013.01); H01L 21/3065 (2013.01); H01L 29/06 (2013.01); H01L 29/1602 (2013.01); H01L 29/6603 (2013.01); H01L 29/66045 (2013.01); H01L 29/78 (2013.01); H01L 29/868 (2013.01); H01L 31/028 (2013.01); H01L 33/34 (2013.01); H01L 21/02573 (2013.01); H01L 29/1606 (2013.01); H01L 29/7781 (2013.01); H01L 33/005 (2013.01); Y02E 10/547 (2013.01);
Abstract

Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm.sup.2/Vs to the diamond lattice at 100 kPa and 300K, and Wherein the n-type donor atoms are introduced to the lattice through ion tracks.

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