The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Sep. 02, 2020
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Shunpei Yamazaki, Tokyo, JP;
Jun Koyama, Kanagawa, JP;
Hiroyuki Miyake, Kanagawa, JP;
Kei Takahashi, Kanagawa, JP;
Kouhei Toyotaka, Kanagawa, JP;
Masashi Tsubuku, Kanagawa, JP;
Kosei Noda, Kanagawa, JP;
Hideaki Kuwabara, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Abstract
An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.