The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Oct. 01, 2021
Applicant:
Mi2-factory Gmbh, Jena, DE;
Inventors:
Florian Krippendorf, Jena, DE;
Constantin Csato, Stammbach, DE;
Assignee:
MI2-FACTORY GMBH, Jena, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/05 (2006.01); H01J 37/317 (2006.01); H01J 37/147 (2006.01);
U.S. Cl.
CPC ...
H01J 37/05 (2013.01); H01J 37/1472 (2013.01); H01J 37/317 (2013.01); H01J 37/3171 (2013.01); H01J 37/3172 (2013.01); H01J 2237/002 (2013.01); H01J 2237/047 (2013.01); H01J 2237/057 (2013.01); H01J 2237/3171 (2013.01); H01J 2237/31705 (2013.01);
Abstract
A method of doping a wafer includes implanting ions into a wafer by irradiating the wafer with an ion beam using an implantation device. The implantation device includes a filter frame and a filter held by the filter frame, wherein the filter is irradiated by the ion beam passing through the filter to the wafer, and the filter is arranged such that protruding microstructures of the filter face away from the wafer and towards the ion beam.