The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2023

Filed:

Jun. 01, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hwangju Song, Suwon-si, KR;

Jaeeun Yoon, Yongin-si, KR;

Jiseok Lee, Hwaseong-si, KR;

Sangwon Hwang, Suwon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/317 (2006.01); G11C 16/04 (2006.01); G11C 11/08 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H01L 23/00 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G01R 31/31724 (2013.01); G01R 31/31703 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 2224/08145 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

A memory device includes; a memory cell array including memory cells, a row decoder selecting a word line in response to a received address, and control logic including a sensing capacitor having a size proportional to a size of a word line capacitor associated with the selected word line. The control logic measures line resistance of the selected word line by precharging the selected word line, performing a charge sharing operation between the selected word line and the sensing capacitor following the precharging of the selected word line, and measuring a voltage of the sensing capacitor following the performing of the charge sharing operation.


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