The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 05, 2023

Filed:

May. 08, 2018
Applicant:

Zhejiang University, Hangzhou, CN;

Inventors:

Chao Gao, Hangzhou, CN;

Li Peng, Hangzhou, CN;

Lin Zhang, Hangzhou, CN;

Assignee:

ZHEJIANG UNIVERSITY, Hangzhou, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/184 (2017.01); C01B 32/198 (2017.01);
U.S. Cl.
CPC ...
C01B 32/184 (2017.08); C01B 32/198 (2017.08); C01B 2204/04 (2013.01);
Abstract

Proposed is a method of preparing an independent free-standing graphene film. The graphene film is obtained by means of suction filtration of graphene oxide into a film, solid phase transfer, chemical reduction and the like steps. The graphene film is formed by means of physical cross-linking of a single layer of oxidized/reduced graphene oxide. The graphene film has a thickness of 10-2000 atomic layers. The graphene oxide film has a small thickness and a large number of defects inside, so that it has good transparency and excellent flexibility. On the basis of the transfer film-forming method above, an independent free-standing wrinkled graphene film having a nanoscale thickness is prepared by using a poor solvent and a special high temperature annealing process, and an independent free-standing foamed graphene film having a nanoscale thickness is obtained by using a film-forming thickness and a special high temperature annealing process.


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