The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Sep. 13, 2022
Applicant:

Electronics and Telecommunications Research Institute, Daejeon, KR;

Inventors:

Jong-Heon Yang, Daejeon, KR;

Seung Youl Kang, Daejeon, KR;

Yong Hae Kim, Daejeon, KR;

Hee-ok Kim, Daejeon, KR;

Jeho Na, Daejeon, KR;

Jaehyun Moon, Daejeon, KR;

Chan Woo Park, Daejeon, KR;

Himchan Oh, Daejeon, KR;

Seong-Mok Cho, Daejeon, KR;

Sung Haeng Cho, Daejeon, KR;

Ji Hun Choi, Daejeon, KR;

Jae-Eun Pi, Daejeon, KR;

Chi-Sun Hwang, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/131 (2023.01); G09G 3/3225 (2016.01); G09G 3/3266 (2016.01); H10K 59/124 (2023.01);
U.S. Cl.
CPC ...
H10K 59/131 (2023.02); G09G 3/3225 (2013.01); G09G 3/3266 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0814 (2013.01); G09G 2300/0842 (2013.01); H10K 59/124 (2023.02);
Abstract

Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.


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