The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Jan. 13, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Woo Bin Song, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H10B 51/30 (2023.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/78391 (2014.09); H01L 29/78696 (2013.01); H01L 2029/42388 (2013.01);
Abstract
A semiconductor device includes a substrate including a first region and a second region, a first gate stack on the first region and including a first gate stacked insulating film and a first gate electrode on the first gate stacked insulating film, and a second gate stack on the second region and including a second gate stacked insulating film and a second gate electrode on the second gate stacked insulating film, wherein a width of the first gate stack is greater than a width of the second gate stack and the second gate stacked insulating film includes a plurality of ferroelectric material films.