The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Dec. 16, 2021
Nanya Technology Corporation, New Taipei, TW;
Chuan-Lin Hsiao, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
The present application provides a method of manufacturing a memory device having several word lines (WL) with reduced leakage. The method includes steps of providing a semiconductor substrate defined with an active area and including an isolation surrounding the active area; forming a first recess extending into the semiconductor substrate and across the active area; forming a first lining portion of a first insulating layer conformal to the first recess; disposing a first conductive material conformal to the first lining portion; forming a first conductive member surrounded by the first conductive material; disposing a second conductive material over the first conductive member to form a first conductive layer enclosing the first conductive member; and forming a first protruding portion of the first insulating layer above the first conductive layer and the first conductive member.