The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Jun. 30, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Mingyu Kim, Suwon-si, KR;

Munhyeon Kim, Hwaseong-si, KR;

Daewon Ha, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 10/00 (2023.01); H01L 29/10 (2006.01); G11C 11/412 (2006.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); G11C 11/412 (2013.01); H01L 29/1033 (2013.01);
Abstract

A semiconductor device may include a pull-down transistor and a pull-up transistor disposed on a substrate. Each of the pull-down transistor and the pull-up transistor may include an active pattern disposed on the substrate; two source/drain patterns disposed on the active pattern; a channel pattern interposed between the two source/drain patterns, the channel pattern including semiconductor patterns that are disposed in a noncontiguous stack, such that a semiconductor pattern does not contact an adjacent semiconductor pattern; and a gate electrode crossing the channel pattern in a first direction. There may be more or less semiconductor patterns of the pull-down transistor as compared to semiconductor patterns of the pull-up transistor.


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