The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Sep. 24, 2021
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Junghan Kim, Gyeonggi-do, KR;

Bonseok Ku, Gyeonggi-do, KR;

Youngpil Kim, Gyeonggi-do, KR;

Kunhak Lee, Gyeonggi-do, KR;

Baeseok Lim, Gyeonggi-do, KR;

Hyoseok Na, Gyeonggi-do, KR;

Changryong Heo, Gyeonggi-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04M 1/02 (2006.01); H04M 1/7246 (2021.01); H04M 1/72412 (2021.01); H04R 5/02 (2006.01);
U.S. Cl.
CPC ...
H04M 1/7246 (2021.01); H04M 1/0254 (2013.01); H04M 1/72412 (2021.01); H04R 5/02 (2013.01);
Abstract

An accessory-recognizing electronic device according to an embodiment of the present invention comprises: a housing; at least one metal plate disposed within the housing; at least one magnetic force detection sensor disposed on the bottom of the at least one metal plate; a memory; and a processor operatively connected to the at least one magnetic force detection sensor and the memory, wherein the processor recognizes attachment of the at least one accessory to the designated area of the housing on the basis of the strength and polarity of a magnetic force detected by the at least one magnetic force detection sensor, the at least one accessory including at least one magnet inside the at least one accessory, and determines properties of the attached at least one accessory corresponding to the detected strength and polarity of the magnetic force, by using information stored in the memory.


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