The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Apr. 12, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

David Seebacher, Villach, AT;

Matteo Bassi, Villach, AT;

Dmytro Cherniak, Villach, AT;

Fabio Padovan, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0205 (2013.01); H03F 3/245 (2013.01); H03F 2200/294 (2013.01); H03F 2200/451 (2013.01);
Abstract

In accordance with an embodiment, a method for operating a millimeter-wave power amplifier including an input transistor having an output node coupled to a load path of a cascode transistor includes: receiving a millimeter-wave transmit signal at a control node of the input transistor; amplifying the millimeter-wave transmit signal to form an output signal; providing the output signal to a load coupled to an output node of the cascode transistor; and adjusting a first DC bias current of the input transistor to form a substantially constant second DC bias current of the cascode transistor.


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