The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Aug. 10, 2018
Applicant:

Mitsui Mining & Smelting Co., Ltd., Tokyo, JP;

Inventor:

Tetsuya Mitsumoto, Takehara, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); H01M 4/58 (2010.01); H01M 4/38 (2006.01); H01M 10/052 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/364 (2013.01); H01M 4/386 (2013.01); H01M 4/58 (2013.01); H01M 10/052 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01);
Abstract

A Si-based negative electrode active material that is capable of improving cycle characteristics, reducing or eliminating a plateau region in the discharge profile, and further improving high-rate characteristics. The Si-based negative electrode active material contains Si and a compound containing Si and a semimetal/metal element M, wherein the content of Si in the negative electrode active material is more than 50 wt %; the content of oxygen atoms (O) is less than 30 wt %; the content of the semimetal/metal element M is more than 10 wt % and less than 50 wt %, wherein in an X-ray diffraction pattern as measured by a powder X-ray diffraction (XRD) device using Cu-Kα1 rays, the full width at half maximum of the peak of the (111) plane of Si is 0.25° or more; and wherein the peak intensity of the peak of the (111) plane of Si is less than 20,000 cps; and the true density is 2.5 g/cmor more.


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