The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Feb. 27, 2020
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Yuichi Yanagisawa, Atsugi, JP;

Hisao Ikeda, Zama, JP;

Tsutomu Murakawa, Isehara, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/41733 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device with high productivity is provided. The semiconductor device includes a first and a second transistor and a first and a second capacitor. The first and the second transistor include gate electrodes and back gate electrodes. The second transistor is provided in a layer above the first transistor, and the second capacitor is provided in a layer above the first capacitor. One electrode of the first capacitor is electrically connected to one of a source electrode and a drain electrode of the first transistor and electrically connected to one of a source electrode and a drain electrode of the second transistor. The other electrode of the first capacitor is formed in the same layer as the back gate electrode of the second transistor.


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