The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Mar. 06, 2020
Applicant:
Guangdong Zhineng Technologies, Co. Ltd., Guangzhou, CN;
Inventor:
Zilan Li, Guangzhou, CN;
Assignee:
GUANGDONG ZHINENG TECHNOLOGIES, CO. LTD., Guangzhou, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/045 (2013.01); H01L 29/0657 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01);
Abstract
The present disclosure relates to a semiconductor device and a method of fabricating the same. The semiconductor device includes: a substrate including a vertical interface; a channel layer disposed outside the vertical interface; and a channel supply layer disposed outside the channel layer; wherein at least one of a vertical two-dimensional electron gas 2DEG and two-dimensional hole gas 2DHG is formed in the channel layer adjacent to an interface between the channel layer and the channel supply layer.