The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Feb. 26, 2021
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Yuki Ohuchi, Suginami, JP;

Katsunori Ueno, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/04 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 29/045 (2013.01); H01L 29/1033 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/7802 (2013.01);
Abstract

A nitride semiconductor device includes a GaN-based semiconductor layer; and an insulating film provided on a first surface of the GaN-based semiconductor layer, the insulating film containing O atoms, and other constituent atoms other than O. An interface between the GaN-based semiconductor layer and the insulating film has a terminating species which terminates a dangling bond of a Ga atom, the terminating species has an outermost electron shell in which one electron is deficient from an allowed number of outermost electrons, and is an atom or molecule having stronger bond to the Ga atom than a H atom, an amount of Ga—O bonds is greater than an amount of bonds between the Ga atoms and the other constituent atoms.


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