The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Apr. 08, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Shih-Ting Huang, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01L 28/91 (2013.01); H01L 28/92 (2013.01); H10B 12/033 (2023.02); H10B 12/31 (2023.02);
Abstract
A method of forming a semiconductor structure includes following steps. A substrate is provided. The substrate has an active region, an isolation structure adjacent to the active region, and a contact on the active region. A dielectric stack is formed on the substrate. A poly layer is formed on the dielectric stack. The poly layer and the dielectric stack are etched to form an opening to expose the contact of the substrate. A conductive film is formed in the opening and an ALD oxide layer is deposited on a sidewall of the opening. In addition, a semiconductor structure is also disclosed herein.