The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Jan. 04, 2021
Shenzhen Goodix Technology Co., Ltd., Shenzhen, CN;
SHENZHEN GOODIX TECHNOLOGY CO., LTD., Shenzhen, CN;
Abstract
Techniques are described for implementing a square-gate source-follower (SGSF) transistor for integration with complementary metal-oxide semiconductor (CMOS) image sensor (CIS) pixels. The SGSF transistor can have an active layer with active regions, including a drain region separated from each of two source regions to form parallel current channels. A square-gate structure layer includes main-gate regions, each disposed above a corresponding one of the current channels, and a side-gate region to couple the main-gate regions. At a particular physical width (W) and current channel length (L), the parallel current channels can act similarly to a conventional linear source-follower having dimensions of 2W and the same L. SGSF implementations can provide a number of features, including higher frame rate, lower power consumption, and lower noise, as compared to those of a conventional source-follower transistor of comparable W and L dimensions.