The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Aug. 31, 2021
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Hyung June Yoon, Icheon-si, KR;

Jong Eun Kim, Icheon-si, KR;

Jong Chae Kim, Icheon-si, KR;

Jae Won Lee, Icheon-si, KR;

Jae Hyung Jang, Icheon-si, KR;

Hoon Moo Choi, Icheon-si, KR;

Assignee:

SK HYNIX INC., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01S 7/4863 (2020.01); H04N 25/76 (2023.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); G01S 7/4863 (2013.01); H04N 25/76 (2023.01);
Abstract

An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.


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