The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Oct. 21, 2020
Applicant:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Norbert Moussy, Grenoble, FR;

Cédric Giroud-Garampon, Grenoble, FR;

Olivier Saxod, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/14623 (2013.01); H01L 27/14643 (2013.01); H01L 31/107 (2013.01);
Abstract

An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.


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