The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Nov. 06, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hanhum Park, Suwon-si, KR;

Insung Kim, Seongnam-si, KR;

Woojeong Shin, Suwon-si, KR;

Jung-Hoon Lee, Seoul, KR;

Sanghyeon Kim, Suwon-si, KR;

Ji Young Choi, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01);
Abstract

Disclosed are semiconductor device fabricating method and semiconductor device fabricated by the same. The method includes forming on a lower mask layer first upper mask patterns and sacrificial spacers that cover sidewalls of the first upper mask patterns, forming first holes in the lower mask layer below the first upper mask patterns, forming second holes in the lower mask layer not covered by the first upper mask patterns and the sacrificial spacers, forming second upper mask patterns filling a space between the sacrificial spacers on the lower mask layer and also forming sacrificial patterns filling the first and second holes, removing the sacrificial spacers, using the first and second upper mask patterns to etch the lower mask layer, and removing the sacrificial patterns.


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