The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Oct. 20, 2020
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Dinkar Nandwana, Tempe, AZ (US);

Eric James Shero, Phoenix, AZ (US);

Carl Louis White, Gilbert, AZ (US);

Todd Robert Dunn, Cave Creek, AZ (US);

William George Petro, Scottsdale, AZ (US);

Jereld Lee Winkler, Gilbert, AZ (US);

Aniket Chitale, Phoenix, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/45544 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02181 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01);
Abstract

The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.


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