The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Jul. 15, 2019
Applicant:
Sumitomo Heavy Industries Ion Technology Co., Ltd., Tokyo, JP;
Inventors:
Yoji Kawasaki, Ehime, JP;
Haruka Sasaki, Ehime, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01L 21/04 (2006.01); H01L 21/324 (2006.01); H01L 21/265 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); H01L 21/047 (2013.01); H01L 21/26586 (2013.01); H01L 21/324 (2013.01); H01L 22/14 (2013.01);
Abstract
An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.