The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Mar. 25, 2020
Shanghai Huali Integrated Circuit Mfg. Co., Ltd., Shanghai, CN;
Ping-Hsun Su, Shanghai, CN;
Shanghai Huali Integrated Circuit Mfg. Co., Ltd., Shanghai, CN;
Abstract
The present invention provides an analysis method for a semiconductor device for analyzing a plurality of electrical parameters of a HKMG fin field effect transistor and a plurality of process parameters for manufacturing the transistor, comprising: performing key process parameter correlation analysis for each electrical parameter, wherein the key process parameter correlation analysis comprises: constructing multiple electrical-process models of the electrical parameter corresponding to each process parameter respectively; performing sensitivity analysis for each of the electrical-process models; determining a plurality of key process parameters from the plurality of process parameters based on the obtained sensitivity analysis results of the electrical-process models; and determining a relationship between the electrical parameter and the plurality of key process parameters based on a knowledge database. According to the analysis method provided by the present invention, the process variation which truly causes the transistor's electrical characteristics to change is excavated through the expert system.