The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Aug. 18, 2022
Applicant:
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Inventors:
Huilong Zhu, Poughkeepsie, NY (US);
Xiaogen Yin, Beijing, CN;
Chen Li, Beijing, CN;
Anyan Du, Beijing, CN;
Yongkui Zhang, Beijing, CN;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/16 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
C23F 1/16 (2013.01); H01L 21/30604 (2013.01);
Abstract
An embodiment of the present disclosure provides an etching method, having the following steps: forming a modified layer having a thickness of one or several atom layers on a selected region of a surface of a semiconductor material layer by using a modifier; and removing the modified layer. When a semiconductor is processed, this method achieves precise control over the etching thickness and improves the etching rate at the same time.