The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2023

Filed:

Oct. 27, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Aykut Aydin, Sunnyvale, CA (US);

Krishna Nittala, San Jose, CA (US);

Karthik Janakiraman, San Jose, CA (US);

Yi Yang, San Jose, CA (US);

Gautam K. Hemani, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/04 (2006.01); C01B 35/02 (2006.01);
U.S. Cl.
CPC ...
C01B 33/043 (2013.01); C01B 35/02 (2013.01); C01P 2002/02 (2013.01); C01P 2006/90 (2013.01);
Abstract

Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.


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