The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Aug. 30, 2021
Huazhong University of Science and Technology, Hubei, CN;
Yi Li, Hubei, CN;
Yuhui He, Hubei, CN;
Yaoyao Fu, Hubei, CN;
Xiaodi Huang, Hubei, CN;
Xiangshui Miao, Hubei, CN;
HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei, CN;
Abstract
The present invention provides a preparation method of a bipolar gating memristor and a bipolar gating memristor. The preparation method includes: preparing a lower electrode; depositing a resistive material layer on the lower electrode; and depositing an upper electrode on the resistive material layer by using a magnetron sputtering manner to deposit the upper electrode, controlling upper electrode metal particles to have suitable kinetic energy by controlling sputtering power, controlling a vacuum degree of a region where the upper electrode and the resistive material layer are located, such that a redox reaction occurs spontaneously between the upper electrode and the resistive material layer during the deposition of the upper electrode to form a built-in bipolar gating layer; and continuously depositing the upper electrode on the built-in bipolar gating layer.