The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2023

Filed:

Apr. 28, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jay Bum Kim, Yongin-si, KR;

Myeong Ho Kim, Hwaseong-si, KR;

Yeon Hong Kim, Hwaseong-si, KR;

Kyoung Seok Son, Seoul, KR;

Sun Hee Lee, Seoul, KR;

Seung Jun Lee, Suwon-si, KR;

Seung Hun Lee, Seoul, KR;

Jun Hyung Lim, Seoul, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H10K 59/124 (2023.01); H10K 59/131 (2023.01); H10K 59/12 (2023.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H10K 59/124 (2023.02); H10K 59/131 (2023.02); H01L 27/1222 (2013.01); H01L 29/786 (2013.01); H10K 59/1201 (2023.02);
Abstract

A display device includes a substrate, a first transistor including a channel on the substrate, a first electrode and a second electrode, and a gate electrode overlapping the channel of the first transistor, a first interlayer insulation layer on the first and second electrodes of the first transistor, a second transistor including a channel disposed on the first interlayer insulation layer, a first electrode and a second electrode of the second transistor, and a gate electrode that overlaps the channel of the second transistor, a first connection electrode disposed on the first interlayer insulation layer, and connected with the first electrode of the first transistor, a gate insulation layer disposed between the first interlayer insulation layer and the first connection electrode, and a second connection electrode that connects the first connection electrode and the first electrode of the second transistor.


Find Patent Forward Citations

Loading…