The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Mar. 30, 2022
Renesas Electronics Corporation, Tokyo, JP;
Hiroki Nagatomi, Tokyo, JP;
Makoto Tanaka, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a first transistor that flows a load current to an external load; a current generation circuit that outputs a current corresponding to a power consumption generated in an overheat detection target when the load current flows the overheat detection target; a resistor-capacitor-network comprising a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance of the overheat detection target, and having one end coupled to the current generation circuit; an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor-network; and a voltage source that sets a voltage of the connection point of the current generation circuit and the resistor-capacitor-network to a predetermined voltage.