The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2023

Filed:

Dec. 28, 2021
Applicant:

Shangrao Jinko Solar Technology Development Co., Ltd, Jiangxi, CN;

Inventors:

Won Jae Chang, Seoul, KR;

Young Gu Do, Seoul, KR;

Sung Jin Kim, Seoul, KR;

Ju Hwa Cheong, Seoul, KR;

Jun Yong Ahn, Seoul, KR;

Hae Jong Cho, Seoul, KR;

Ji Soo Ko, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0747 (2012.01); H01L 31/18 (2006.01); H01L 31/0236 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/182 (2013.01); H01L 31/02168 (2013.01); H01L 31/02363 (2013.01); H01L 31/022425 (2013.01); H01L 31/0747 (2013.01);
Abstract

Discussed is a solar cell including a single crystalline silicon substrate, a polycrystalline silicon layer on a back surface and side surfaces of the single crystalline silicon substrate, a diffusion region on a front surface of the single crystalline silicon substrate, a front passivation layer on the diffusion region, a back passivation layer on the polycrystalline silicon layer, a first electrode connected to the diffusion region through the front passivation layer, and a second electrode connected to the polycrystalline silicon layer through the back passivation layer, wherein the side surfaces of the single crystalline silicon substrate includes a first portion without the polycrystalline silicon layer and a second portion with the polycrystalline silicon layer.


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