The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
May. 05, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78391 (2014.09); H01L 29/516 (2013.01); H01L 29/6684 (2013.01);
Abstract
An oxide semiconductor transistor includes: an insulating substrate including a trench; a gate electrode in the trench; an oxide semiconductor layer on a surface of the insulating substrate, the surface exposed through the trench; and a ferroelectric layer between the gate electrode and the oxide semiconductor layer, wherein the oxide semiconductor layer may include a source region and a drain region which are on the insulating substrate outside the trench and are apart from each other with the gate electrode therebetween.