The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Nov. 19, 2019
Applicant:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Inventor:
Hiroki Sugiyama, Tokyo, JP;
Assignee:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 29/78 (2006.01); H01L 29/812 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7806 (2013.01); H01L 29/812 (2013.01);
Abstract
A buffer layer, an etching stop layer, and a channel layer are epitaxially grown in this order on a substrate. The substrate contains InP that has a high resistance by, for example, being doped with Fe. The buffer layer contains a compound semiconductor lattice-matched to InP. The etching stop layer includes InAlP (0≤x≤0.75). The channel layer contains InGaAs (0<y≤1).
Sugiyama, Hiroki. (2023). Field effect transistor and method for manufacturing same (U.S. Patent No. 11824110). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11824110
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile