The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Aug. 31, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Masaki Miyazato, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A silicon carbide semiconductor device includes silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a first semiconductor region of the first conductivity type, a trench, a gate insulating film, a gate electrode, and an interlayer insulating film. The first semiconductor layer and the second semiconductor layer constitute a first-conductivity-type semiconductor layer and in a deep region of the first-conductivity-type semiconductor layer at least 1 μm from an interface with the third semiconductor layer, a maximum value of a concentration of aluminum is less than 3.0×10/cm. In the deep region of the first-conductivity-type semiconductor layer, a maximum value of a concentration of boron is less than 1.0×10/cm.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile