The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11824090 B1

Date of Patent:

Nov. 21, 2023

Filed:

Jun. 21, 2021

Back side dopant activation in field stop igbt

Applicant:

Ipower Semiconductor, Gilroy, CA (US);

Inventor:

Hamza Yilmaz, Gilroy, CA (US);

Assignee:

Attorney:

David T. Millers

Primary Examiner:

Jay C Chang

Int. Cl.

CPC ...

H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01);

U.S. Cl.

CPC ...

H01L 29/0834 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02631 (2013.01); H01L 21/2253 (2013.01); H01L 21/26513 (2013.01); H01L 21/2855 (2013.01); H01L 21/304 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/30625 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 29/063 (2013.01); H01L 29/0623 (2013.01); H01L 29/0638 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01);

Abstract

A field stop insulated gate bipolar transistor (IGBT) fabricated without back-side laser dopant activation or any process temperatures over 450° C. after fabrication of front-side IGBT structures provides activated injection regions with controlled dopant concentrations. Injection regions may be formed on or in a substrate by epitaxial growth or ion implants and diffusion before growth of N field stop and drift layers and front-side fabrication of IGBT active cells. Back-side material removal can expose the injection region(s) for electrical connection to back-side metal. Alternatively, after front-side fabrication of IGBT active cells, back-side material removal can expose the field stop layer (or injection regions) and sputtering using a silicon target with a well-controlled doping concentration can form hole or electron injection regions with well-controlled doping concentration.

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