The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Oct. 20, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Toshihiro Imasaka, Tokyo, JP;
Kazuhiro Shimizu, Tokyo, JP;
Manabu Yoshino, Tokyo, JP;
Yuji Kawasaki, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Provided is a semiconductor device including: an N-type diffusion layer being a second region, formed in a surface portion of a P-type diffusion layer being a first region, to function as a RESURF region; an N-type buried diffusion layer being a third region formed in a bottom portion of the second region, close to a high-side circuit; and a MOSFET using the second region as a drift layer. The MOSFET includes a thermal oxide film formed between an N-type diffusion layer being a fourth region serving as a drain region and an N-type diffusion layer being a sixth region serving as a source region, and an N-type diffusion layer being a seventh region formed below the thermal oxide film. The seventh region has an end portion close to a low-side circuit, being closer to the low-side circuit than an end portion of the third region close to the low-side circuit.