The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2023
Filed:
Aug. 16, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An object of a technique of the present disclosure is to suppress reduction in withstand voltage in a power semiconductor device. A semiconductor base includes an n− type semiconductor substrate and at least one p type diffusion layer formed separately from each other on a surface layer on a side of a first main surface of the semiconductor substrate in a terminal region. A power semiconductor device includes at least one insulating film formed on a first main surface of the semiconductor base between an insulating film and the insulating film. A semi-insulating film has contact with the insulating film on the insulating film, and has contact with the first main surface in at least two regions where the insulating film is not formed between the insulating films.