The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2023

Filed:

Mar. 23, 2021
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Ajou University Industry-academic Cooperation Foundation, Suwon-si, KR;

Inventors:

Changsoo Lee, Seoul, KR;

Sangwoon Lee, Suwon-si, KR;

Chan Kwak, Yongin-si, KR;

Hyungjun Kim, Suwon-si, KR;

Euncheol Do, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/108 (2006.01); C04B 35/057 (2006.01); C04B 35/01 (2006.01); C04B 35/64 (2006.01); C04B 35/495 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 28/55 (2013.01); C04B 35/01 (2013.01); C04B 35/057 (2013.01); C04B 35/495 (2013.01); C04B 35/64 (2013.01); H10B 12/038 (2023.02); H10B 12/37 (2023.02);
Abstract

Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions.ABO  <Formula 1> In Formula 1, A, B, x, y, and z are disclosed in the specification.


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